IR2130PBF
  • image of IR2130PBF

IR2130PBF

分类：
制造商：
描述：
IR2130S - GATE DRIVER
封装：
包装：
Bulk
RoHS：
YES

请求报价

库存 0

对价格不满意？请在下方填写信息快速发送 RFQ，我们将立即回应

相似型号
MCP14A0902T-E/MNYVAO
Microchip Technology
9A SINGLE MOSFET DRIVER WITH LOW
MCP14A0454T-E/SNVAO
Microchip Technology
DUAL 4.5A, BOTH CHA & CHB ARE NO
MCP14A0303T-E/SNVAO
Microchip Technology
DUAL 3.0A, BOTH CHA & CHB ARE IN
MCP14A0454T-E/MSVAO
Microchip Technology
DUAL 4.5A, BOTH CHA & CHB ARE NO
MCP14A0305T-E/SNVAO
Microchip Technology
DUAL 3.0A, CHA IS INVERTED & CHB
MCP14A0901T-E/MNYVAO
Microchip Technology
9A SINGLE MOSFET DRIVER WITH LOW
MCP14A0455T-E/MSVAO
Microchip Technology
4.5A DUAL MOSFET DRIVER WITH LOW
MCP14A0453T-E/MSVAO
Microchip Technology
DUAL 4.5A, BOTH CHA & CHB ARE IN
MCP14A0303T-E/MSVAO
Microchip Technology
DUAL 3.0A, BOTH CHA & CHB ARE IN
MCP14A0304T-E/SNVAO
Microchip Technology
DUAL 3.0A, BOTH CHA & CHB ARE NO
规格
零件状态
Obsolete
安装类型
Through Hole
可编程
Not Verified
驱动配置
Half-Bridge
输入类型
Non-Inverting
封装 / 外壳
28-DIP (0.600", 15.24mm)
供应商器件封装
28-DIP
工作温度
-40°C ~ 125°C (TA)
栅极类型
IGBT, MOSFET (N-Channel)
电压 - 供电
10V ~ 20V
高侧电压 - 最大值（自举）
600 V
沟道类型
3-Phase
驱动器数量
6
逻辑电压 - 低电平输入电压(VIL)，高电平输入电压(VIH)
0.8V, 2.2V
上升/下降时间（典型值）
80ns, 35ns
电流 - 峰值输出（源极，漏极）
200mA, 420mA